A 0.35μm BiCMOS technology with 50 GHz Fmax selective epitaxial base transistors for RF applications

Decoutere, StefaanStefaanDecoutereKuhn, RudigerRudigerKuhnVleugels, FrankFrankVleugelsVancuyck, GeertGeertVancuyckCaymax, MattyMattyCaymaxMohadjeri, BabakBabakMohadjeriDeferm, LudoLudoDeferm2021-09-302021-09-301998https://imec-publications.be/handle/20.500.12860/2522A 0.35μm BiCMOS technology with 50 GHz Fmax selective epitaxial base transistors for RF applicationsProceedings paper