Demonstration of low Vt Ni-FUSI N-MOSFETs with SiON dielectrics by using a Dy2O3 cap layer

Yu, HongYuHongYuYuChang, Shou-ZenShou-ZenChangVeloso, AnabelaAnabelaVelosoLauwers, AnneAnneLauwersAdelmann, ChristophChristophAdelmannOnsia, BartBartOnsiaLehnen, PeerPeerLehnenKauerauf, ThomasThomasKaueraufBrus, StephanStephanBrusAbsil, PhilippePhilippeAbsilBiesemans, SergeSergeBiesemans2021-10-162021-10-162007-11https://imec-publications.be/handle/20.500.12860/13249Demonstration of low Vt Ni-FUSI N-MOSFETs with SiON dielectrics by using a Dy2O3 cap layerJournal article