Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs

Tallarico, AndreaAndreaTallaricoStoffels, SteveSteveStoffelsMagnone, PaoloPaoloMagnonePosthuma, NielsNielsPosthumaSangiorgi, EnricoEnricoSangiorgiDecoutere, StefaanStefaanDecoutereFiegna, ClaudioClaudioFiegna2021-10-242021-10-2420170741-3106https://imec-publications.be/handle/20.500.12860/29548Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTsJournal articlehttp://ieeexplore.ieee.org/document/7752803/