Low-frequency noise characteristics of waveguide-integrated lateral and vertical Ge-on-Si p-i-n photodiodes

Musibau, SolomonSolomonMusibauArnold, Kellen P.Kellen P.ArnoldVeluri, Anurag R.Anurag R.VeluriFranco, JacopoJacopoFrancoTsiara, ArtemisiaArtemisiaTsiaraCroes, KristofKristofCroesVan Campenhout, JorisJorisVan CampenhoutSchrimpf, Ronald D.Ronald D.SchrimpfReed, Robert A.Robert A.ReedDe Wolf, IngridIngridDe WolfFleetwood, Daniel M.Daniel M.Fleetwood2025-12-192025-12-1920250021-8979https://imec-publications.be/handle/20.500.12860/58609engLow-frequency noise characteristics of waveguide-integrated lateral and vertical Ge-on-Si p-i-n photodiodesJournal article10.1063/5.0287589WOS:0015999390000011/F NOISESILICON PHOTONICSGENERATIONRECOMBINATIONRELIABILITYDEFECTSRADIATIONCARRIERSDIODESTOOL