In-line and nondestructive analysis of selectively grown epitaxial Si1-xGex and Si/Si1-xGex layers by spectroscopic ellipsometry and comparison with other established techniques

Loo, RogerRogerLooCaymax, MattyMattyCaymaxBlavier, G.G.BlavierKremer, StephanieStephanieKremer2021-10-142021-10-142001https://imec-publications.be/handle/20.500.12860/5452In-line and nondestructive analysis of selectively grown epitaxial Si1-xGex and Si/Si1-xGex layers by spectroscopic ellipsometry and comparison with other established techniquesProceedings paper