Bonaldo, StefanoStefanoBonaldoZhang, En XiaEn XiaZhangZhao, SimengSimengZhaoPutcha, VamsiVamsiPutchaParvais, BertrandBertrandParvaisLinten, DimitriDimitriLintenGerardin, SimoneSimoneGerardinPaccagnella, AlessandroAlessandroPaccagnellaReed, Robert A.Robert A.ReedSchrimpf, Ronald D.Ronald D.SchrimpfFleetwood, Daniel M.Daniel M.Fleetwood2021-10-282021-10-2820200018-9499https://imec-publications.be/handle/20.500.12860/34797Total-ionizing-dose effects in InGaAs MOSFETs with high-k gate dielectrics and InP substratesJournal article