High-performance (EOT<0.4nm, Jg~10-7A/cm2) ALD-deposited Ru\SrTiO3 stack for next generations DRAM pillar capacitor

Popovici, Mihaela IoanaMihaela IoanaPopoviciBelmonte, AttilioAttilioBelmonteOh, HyungrockHyungrockOhPotoms, GoedeleGoedelePotomsMeersschaut, JohanJohanMeersschautRichard, OlivierOlivierRichardHody, HubertHubertHodyVan Elshocht, SvenSvenVan ElshochtDelhougne, RomainRomainDelhougneGoux, LudovicLudovicGouxKar, Gouri SankarGouri SankarKar2021-10-262021-10-262018https://imec-publications.be/handle/20.500.12860/31553High-performance (EOT<0.4nm, Jg~10-7A/cm2) ALD-deposited Ru\SrTiO3 stack for next generations DRAM pillar capacitorProceedings paperhttps://ieeexplore.ieee.org/document/8614673