AlGaN-based heterostructures grown on 4 inch Si(111) by MOVPE

Cheng, KaiKaiChengLeys, MaartenMaartenLeysDerluyn, JoffJoffDerluynBalachander, KrishnanKrishnanBalachanderDegroote, StefanStefanDegrooteGermain, MarianneMarianneGermainBorghs, GustaafGustaafBorghs2021-10-172021-10-1720081610-1634https://imec-publications.be/handle/20.500.12860/13507AlGaN-based heterostructures grown on 4 inch Si(111) by MOVPEJournal article