A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/AC NBTI Stress/Recovery Condition in Si p-FinFETs

Zhou, LongdaLongdaZhouZhang, ZhaohaoZhaohaoZhangYang, HongHongYangJi, ZhigangZhigangJiLiu, QianqianQianqianLiuZhang, QingzhuQingzhuZhangSimoen, EddyEddySimoenYin, HuaxiangHuaxiangYinLuo, JunJunLuoDu, AnyanAnyanDuZhao, ChaoChaoZhaoWang, WenwuWenwuWang2022-02-072021-11-022022-02-0720211541-7026WOS:000672563100017https://imec-publications.be/handle/20.500.12860/37695A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/AC NBTI Stress/Recovery Condition in Si p-FinFETsProceedings paper10.1109/IRPS46558.2021.9405105978-1-7281-6893-7WOS:000672563100017