Monolithically integrated GaN power ICs design facilitated by the MVSG compact model applied to enhancement-mode p-GaN gate HEMTs

You, ShuzhenShuzhenYouLi, XiangdongXiangdongLiParvais, BertrandBertrandParvaisPosthuma, NielsNielsPosthumaGeens, KarenKarenGeensStoffels, SteveSteveStoffelsDecoutere, StefaanStefaanDecoutere2021-10-282021-10-282019https://imec-publications.be/handle/20.500.12860/34496Monolithically integrated GaN power ICs design facilitated by the MVSG compact model applied to enhancement-mode p-GaN gate HEMTsMeeting abstract