Gate induced floating body effect behavior in uniaxially strained SOI nMOSFETs

Agopian, Paula G.D.Paula G.D.AgopianPacheco, Vinicius H.Vinicius H.PachecoMartino, Joao A.Joao A.MartinoSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-172021-10-172009https://imec-publications.be/handle/20.500.12860/14887Gate induced floating body effect behavior in uniaxially strained SOI nMOSFETsProceedings paper