Transient performance, breakdown and degradation of power transistors GaN on Si technology

Meneghini, MatteoMatteoMeneghiniBisi, DavideDavideBisiMarcon, DenisDenisMarconStoffels, SteveSteveStoffelsVan Hove, MarleenMarleenVan HoveWu, Tian-LiTian-LiWuDecoutere, StefaanStefaanDecoutereMeneghesso, GaudenzioGaudenzioMeneghessoZanoni, EnricoEnricoZanoni2021-10-212021-10-212013https://imec-publications.be/handle/20.500.12860/22800Transient performance, breakdown and degradation of power transistors GaN on Si technologyProceedings paper