Resistive switching-like behaviour of the dielectric breakdown in ultra-thin Hf based gate stacks in mosfets

Crespo-yepes, A.A.Crespo-yepesMartin-Martinez, J.J.Martin-MartinezRodriguez, R.R.RodriguezNafria, M.M.NafriaAymerich, X.X.AymerichRothschild, AudeAudeRothschild2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/16915Resistive switching-like behaviour of the dielectric breakdown in ultra-thin Hf based gate stacks in mosfetsProceedings paper