Atomic-Scale Investigations on the Wet Etching of Group IV Semiconductors in Acidic H2O2 Solution: The Case Ge Versus Si-Ge

van Dorp, DennisDennisvan DorpAbrenica, GranielGranielAbrenicaMayer, T.T.MayerArnauts, SophiaSophiaArnautsAltamirano Sanchez, EfrainEfrainAltamirano SanchezDe Gendt, StefanStefanDe Gendt2022-05-102021-11-302022-05-102021-050013-4651https://imec-publications.be/handle/20.500.12860/38502Atomic-Scale Investigations on the Wet Etching of Group IV Semiconductors in Acidic H2O2 Solution: The Case Ge Versus Si-GeMeeting abstractMaterials science