Observation of hot-carrier-induced nFET gate oxide breakdown in dynamically stressed CMOS circuits

Kaczer, BenBenKaczerCrupi, FeliceFeliceCrupiDegraeve, RobinRobinDegraeveRoussel, PhilippePhilippeRousselCiofi, IvanIvanCiofiGroeseneken, GuidoGuidoGroeseneken2021-10-142021-10-142002https://imec-publications.be/handle/20.500.12860/6458Observation of hot-carrier-induced nFET gate oxide breakdown in dynamically stressed CMOS circuitsProceedings paper