Advances in SiCN-SiCN bonding with high accuracy wafer-to-wafer (W2W) stacking technology

Peng, LanLanPengKim, Soon-WookSoon-WookKimIacovo, SerenaSerenaIacovoInoue, FumihiroFumihiroInouePhommahaxay, AlainAlainPhommahaxaySleeckx, ErikErikSleeckxDe Vos, JoeriJoeriDe VosZinner, DominikDominikZinnerWagenleitner, ThomasThomasWagenleitnerUhrmann, ThomasThomasUhrmannWimplinger, MarkusMarkusWimplingerSchoenaers, BenBenSchoenaersStesmans, AndreAndreStesmansAfanasiev, ValeriValeriAfanasievMiller, AndyAndyMillerBeyer, GeraldGeraldBeyerBeyne, EricEricBeyne2021-10-262021-10-262018https://imec-publications.be/handle/20.500.12860/31505Advances in SiCN-SiCN bonding with high accuracy wafer-to-wafer (W2W) stacking technologyProceedings paperhttps://ieeexplore.ieee.org/document/8429664