Tsai, WilmanWilmanTsaiRagnarsson, Lars-AkeLars-AkeRagnarssonChen, P.J.P.J.ChenOnsia, BartBartOnsiaCarter, RichardRichardCarterCartier, EduardEduardCartierYoung, EdwardEdwardYoungGreen, MartinMartinGreenCaymax, MattyMattyCaymaxDe Gendt, StefanStefanDe GendtHeyns, MarcMarcHeyns2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/8229Comparison of sub 1 nm TiN/HfO2 with Poly-Si/HfO2 gate stacks u sing scaled chemical oxide interfacesProceedings paper