Internal photoemission at interfaces of ALD TaiOx insulating layers deposited on Si, InP and In0.53Ga0.47As

Chou, H.-Y.H.-Y.ChouAfanasiev, ValeriValeriAfanasievThoan, N.H.N.H.ThoanAdelmann, ChristophChristophAdelmannLin, DennisDennisLinHoussa, MichelMichelHoussaStesmans, AndreAndreStesmans2021-10-202021-10-202012https://imec-publications.be/handle/20.500.12860/20461Internal photoemission at interfaces of ALD TaiOx insulating layers deposited on Si, InP and In0.53Ga0.47AsProceedings paperhttp://iopscience.iop.org/1757-899X/41/1/012019