Temperature impact on the Lorentzian noise induced by electron valence-band tunneling in partially depleted SOI p-MOSFETs

Guo, W.W.GuoCretu, B.B.CretuRoutoure, J.M.J.M.RoutoureCarin, R.R.CarinSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/12239Temperature impact on the Lorentzian noise induced by electron valence-band tunneling in partially depleted SOI p-MOSFETsJournal article