Vapor phase doping and sub-melt laser anneal for ultra-shallow extension junctions in sub-32 nm CMOS technology

Nguyen, DuyDuyNguyenRosseel, ErikErikRosseelTakeuchi, ShotaroShotaroTakeuchiEveraert, Jean-LucJean-LucEveraertLoo, RogerRogerLooGoossens, JozefienJozefienGoossensMoussa, AlainAlainMoussaClarysse, TrudoTrudoClarysseVandervorst, WilfriedWilfriedVandervorst2021-10-182021-10-182009-09https://imec-publications.be/handle/20.500.12860/15920Vapor phase doping and sub-melt laser anneal for ultra-shallow extension junctions in sub-32 nm CMOS technologyProceedings paper