Growth and characterization of unintentionally doped GaN grown on silicon(111) substrates

Leys, MaartenMaartenLeysCheng, KaiKaiChengDerluyn, JoffJoffDerluynDegroote, StefanStefanDegrooteGermain, MarianneMarianneGermainBorghs, GustaafGustaafBorghsTaylor, C.A.C.A.TaylorDawson, P.P.Dawson2021-10-172021-10-1720080022-0248https://imec-publications.be/handle/20.500.12860/14021Growth and characterization of unintentionally doped GaN grown on silicon(111) substratesJournal article