Mukhopadhyay, BratatiBratatiMukhopadhyayBiswas, AbhijitAbhijitBiswasBasu, P.K.P.K.BasuEneman, GeertGeertEnemanVerheyen, PeterPeterVerheyenSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-172021-10-1720080268-1242https://imec-publications.be/handle/20.500.12860/14195Modelling of threshold voltage and subthreshold slope of strained-Si MOSFETs including quantum effectsJournal article