Negative bias temperature instability in devices with millisecond annealed ultra-shallow junctions

Moras, MiquelMiquelMorasMartin-Martinez, JavierJavierMartin-MartinezRodriguez, RosannaRosannaRodriguezNafria, MontseMontseNafriaAymerich, XavierXavierAymerichSimoen, EddyEddySimoen2021-10-212021-10-212013https://imec-publications.be/handle/20.500.12860/22820Negative bias temperature instability in devices with millisecond annealed ultra-shallow junctionsProceedings paperhttp://www.isdrs2013.org/technical-program