Vaisman Chasin, AdrianAdrianVaisman ChasinFranco, JacopoJacopoFrancoMatsubayashi, DaisukeDaisukeMatsubayashiTyaginov, StanislavStanislavTyaginovvan Setten, MichielMichielvan SettenDe Wachter, BartBartDe WachterDekkers, HaroldHaroldDekkersKruv, AnastasiiaAnastasiiaKruvRinaudo, PietroPietroRinaudoZhao, YingYingZhaoPanarella, LucaLucaPanarellaAfanasiev, ValeriValeriAfanasievPavel, AlexandruAlexandruPavelWan, YiqunYiqunWanSubhechha, SubhaliSubhaliSubhechhaBelmonte, AttilioAttilioBelmonteKaczer, BenBenKaczerKar, Gouri SankarGouri SankarKar2026-07-232026-07-232025979-8-3315-6786-62380-9248https://imec-publications.be/handle/20.500.12860/59908We propose a novel annealing scheme for IGZO-based transistors, which enables the hydrogen resilience needed to meet the reliability specs for embedded DRAM applications: an overdrive voltage of 1.2V for a lifetime of 5 years at 95°C. First, we show that standard IGZO compositions (~1:1:1 at%) and In-Poor (In~10%) suffer from opposite reliability limitations. Standard IGZO only meets the reliability target for the +ΔVth component caused by electron trapping, In-Poor only meets the reliability target for the -ΔVth component caused by H-doping. We ascribe the observed ~10x larger +ΔVth in In-Poor films to a closer energetic alignment between IGZO Ec and Al2O3 trap bands. Second, we describe how a combination of hydrogen (FGA) and oxygen anneals reduces the H-doping process during PBTI stress by ~30x, without a performance penalty. This reliability improvement is reasoned to be due to excess oxygen scavenging during FGA, minimizing the preferential bonding sites of hydrogen released by the gate-dielectric during PBTI at high temperatures.engProceedings paper10.1109/iedm50572.2025.11353832WOS:001701480300247