Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications

Sasaki, KatiaKatiaSasakiNicoletti, TalithaTalithaNicolettiAlmeida, LucianoLucianoAlmeidaDos Santos, SaraSaraDos SantosNissimoff, AlbertAlbertNissimoffAoulaiche, MarcMarcAoulaicheSimoen, EddyEddySimoenClaeys, CorCorClaeysMartino, JoaoJoaoMartino2021-10-222021-10-2220140038-1101https://imec-publications.be/handle/20.500.12860/24481Improved retention times in UTBOX nMOSFETs for 1T-DRAM applicationsJournal articlehttp://www.sciencedirect.com/science/article/pii/S0038110114000793