Strain relaxation of SiGe/Si heterostructures by helium ionimplantation and subsequent annealing : Helium precipitates acting as dislocation sources

Hueging, NorbertNorbertHuegingLuysberg, MartinaMartinaLuysbergUrban, KnutKnutUrbanBuca, DanDanBucaHollaender, BerndBerndHollaenderMantl, SiegfriedSiegfriedMantlMorschbacher, MarcioMarcioMorschbacherFichtner, PauloPauloFichtnerLoo, RogerRogerLooCaymax, MattyMattyCaymax2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10623Strain relaxation of SiGe/Si heterostructures by helium ionimplantation and subsequent annealing : Helium precipitates acting as dislocation sourcesProceedings paper