Comparison between bulk and floating body partially depleted SOI nMOSFETs for high frequency analog applications operating from 300 K down to 90 K

Pavanello, M.A.M.A.PavanelloMartino, J.A.J.A.MartinoSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/11003Comparison between bulk and floating body partially depleted SOI nMOSFETs for high frequency analog applications operating from 300 K down to 90 KProceedings paper