Fahmy, EslamEslamFahmyOuyang, ZhongtaoZhongtaoOuyangColucci, DavideDavideColucciVan Campenhout, JorisJorisVan CampenhoutKunert, BernardetteBernardetteKunertVan Thourhout, DriesDriesVan Thourhout2026-03-192026-03-192025979-8-3315-0619-31949-2081https://imec-publications.be/handle/20.500.12860/58881We demonstrate a novel vertically emitting nano-ridge laser epitaxially grown on a 300-mm silicon wafer. By leveraging the concept of bound states in the continuum (BICs), we achieve confined optical modes with high Q-factors within the structure. We experimentally show low threshold lasing (10 kW/cm2).engInGaAs/GaAs Nano-Ridge Laser Based on Bound States in the Continuum Epitaxially Grown on a SiProceedings paper10.1109/SiPhotonics64386.2025.10985097WOS:001556149600041