Billet, MaximilienMaximilienBilletPoelman, StijnStijnPoelmanCuyvers, StijnStijnCuyversHermans, ArturArturHermansSeema Saseendran, SandeepSandeepSeema SaseendranNakamura, TasukuTasukuNakamuraOkamoto, ShinyaShinyaOkamotoInada, YasuhisaYasuhisaInadaHisada, KazuyaKazuyaHisadaHirasawa, TakuTakuHirasawaRamirez, JoanJoanRamirezNeel, DelphineDelphineNeelVaissiere, NicolasNicolasVaissiereRoelkens, GuntherGuntherRoelkensKjellman, JonJonKjellmanKuyken, BartBartKuyken2026-01-192026-01-192024978-1-5106-7043-30277-786Xhttps://imec-publications.be/handle/20.500.12860/58674We demonstrate a III-V-on-silicon-nitride mode-locked laser through the heterogeneous integration of a semiconductor optical amplifier on a passive silicon nitride cavity using the technique of micro-transfer printing. Specifically, we explore the impact of the gain voltage and saturable absorber current on the locking stability of a tunable mode-locked laser. By manipulating these parameters, we demonstrate the control of the optical spectrum across a wide range of wavelengths spanning from 1530 nm to 1580 nm. Furthermore, we implement an optimization approach based on a Monte Carlo analysis aimed at enhancing the mode overlap within the gain region. This adjustment enables the achievement of a laser emitting a 23 nm wide spectrum while maintaining a defined 10 dB bandwidth for a pulse repetition rate of 3 GHz.enQUANTUM-DOTMode-locked lasersHeterogeneous integrationSilicon nitrideIII-VTransfer printingScience & TechnologyTechnologyPhysical SciencesProceedings paper10.1117/12.2691021WOS:001214252400011