Borga, MatteoMatteoBorgaMukherjee, KalparupaKalparupaMukherjeeDe Santi, CarloCarloDe SantiStoffels, SteveSteveStoffelsGeens, KarenKarenGeensYou, ShuzhenShuzhenYouBakeroot, BenoitBenoitBakerootDecoutere, StefaanStefaanDecoutereMeneghesso, GaudenzioGaudenzioMeneghessoZanoni, EnricoEnricoZanoniMeneghini, MatteoMatteoMeneghini2021-10-282021-10-2820201882-0778https://imec-publications.be/handle/20.500.12860/34809Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devicesJournal articlehttps://iopscience.iop.org/article/10.35848/1882-0786/ab6ef8