Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors

Favero, D.D.FaveroDe Santi, C.C.De SantiMukherjee, K.K.MukherjeeBorga, MatteoMatteoBorgaGeens, KarenKarenGeensChatterjee, UrmimalaUrmimalaChatterjeeBakeroot, BenoitBenoitBakerootDecoutere, StefaanStefaanDecoutereRampazzo, F.F.RampazzoMeneghesso, G.G.MeneghessoZanoni, E.E.ZanoniMeneghini, M.M.Meneghini2023-05-252023-01-092023-05-2520220026-2714WOS:000896860700011https://imec-publications.be/handle/20.500.12860/40950Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitorsJournal article10.1016/j.microrel.2022.114620WOS:000896860700011