Active area oxidation during the densification of shallow trench isolation for sub-0.25 micron CMOS

Bazley, D. J.D. J.BazleyJones, S. K.S. K.JonesBadenes, GonçalGonçalBadenes2021-09-302021-09-301998https://imec-publications.be/handle/20.500.12860/2374Active area oxidation during the densification of shallow trench isolation for sub-0.25 micron CMOSProceedings paper