Epitaxial laterial overgrowth of GaN on sapphire. An examination of epitaxy quality using synchrotron X-ray topography

McNally, P. J.P. J.McNallyTuomi, T.T.TuomiLowney, D.D.LowneyJacobs, KoenKoenJacobsDanilewsky, A. N.A. N.DanilewskyRantamaki, R.R.RantamakiO'Hare, M.M.O'HareConsidine, L.L.Considine2021-10-142021-10-142001https://imec-publications.be/handle/20.500.12860/5473Epitaxial laterial overgrowth of GaN on sapphire. An examination of epitaxy quality using synchrotron X-ray topographyJournal article