Comparison of SiO2 and HfO2/SiO2 gate stacks electrical behaviour at a nanometre scale

Blasco, XavierXavierBlascoNafria, M.M.NafriaAymerich, X.X.AymerichVandervorst, WilfriedWilfriedVandervorst2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10110Comparison of SiO2 and HfO2/SiO2 gate stacks electrical behaviour at a nanometre scaleJournal article