Modeling the single-gate, double-gate and gate-all-around tunnel field-effect transistor

Verhulst, AnneAnneVerhulstSoree, BartBartSoreeLeonelli, DanieleDanieleLeonelliVandenberghe, WilliamWilliamVandenbergheGroeseneken, GuidoGuidoGroeseneken2021-10-182021-10-1820100021-8979https://imec-publications.be/handle/20.500.12860/18274Modeling the single-gate, double-gate and gate-all-around tunnel field-effect transistorJournal article