Weyher, J. L.J. L.Weyhervan Dorp, DennisDennisvan DorpConard, ThierryThierryConardNowak, G.G.NowakLevchenko, I.I.LevchenkoKelly, J. J.J. J.Kelly2022-01-202022-01-202022-01-2020221932-7447WOS:000742124000001https://imec-publications.be/handle/20.500.12860/38764Chemical Etching of GaN in KOH Solution: Role of Surface Polarity and Prior PhotoetchingJournal article10.1021/acs.jpcc.1c06528WOS:000742124000001N-FACEWETEFFICIENCYCHEMISTRYSAPPHIRELAYERSOXIDE