Impact of layer alignment on the behavior of MoS 2- ZrS 2 tunnel field-effect transistors: an ab initio study

Lu, AugustinAugustinLuHoussa, MichelMichelHoussaLuisier, MathieuMathieuLuisierPourtois, GeoffreyGeoffreyPourtois2021-10-242021-10-2420172331-7019https://imec-publications.be/handle/20.500.12860/28863Impact of layer alignment on the behavior of MoS 2- ZrS 2 tunnel field-effect transistors: an ab initio studyJournal articlehttps://doi.org/10.1103/PhysRevApplied.8.034017