Threshold voltage instability of p-channel metal-oxide-semiconductor field effect transistors with hafnium based dielectrics

Zhao, C.Z.C.Z.ZhaoZahid, M.B.M.B.ZahidZhang, J.F.J.F.ZhangGroeseneken, GuidoGuidoGroesenekenDegraeve, RobinRobinDegraeveDe Gendt, StefanStefanDe Gendt2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/13265Threshold voltage instability of p-channel metal-oxide-semiconductor field effect transistors with hafnium based dielectricsJournal article