Strain enhanced FUSI/HfSiON technology with optimized CMOS process window

Veloso, AnabelaAnabelaVelosoVerheyen, PeterPeterVerheyenVos, RitaRitaVosBrus, StephanStephanBrusIto, SatoruSatoruItoMitsuhashi, RiichirouRiichirouMitsuhashiParaschiv, VasileVasileParaschivShi, XiaopingXiaopingShiOnsia, BartBartOnsiaArnauts, SophiaSophiaArnautsLoo, RogerRogerLooLauwers, AnneAnneLauwersConard, ThierryThierryConardde Marneffe, Jean-FrancoisJean-Francoisde MarneffeGoossens, DannyDannyGoossensBaute, DebbieDebbieBauteLocorotondo, SabrinaSabrinaLocorotondoChiarella, ThomasThomasChiarellaKerner, ChristophChristophKernerVrancken, ChristaChristaVranckenMertens, SofieSofieMertensO'Sullivan, BarryBarryO'SullivanYu, HongYuHongYuYuChang, Shou-ZenShou-ZenChangNiwa, MasaakiMasaakiNiwaKittl, JorgeJorgeKittlAbsil, PhilippePhilippeAbsilJurczak, GosiaGosiaJurczakHoffmann, Thomas Y.Thomas Y.HoffmannBiesemans, SergeSergeBiesemans2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/13156Strain enhanced FUSI/HfSiON technology with optimized CMOS process windowProceedings paper