Chen, Shih-HungShih-HungChenGriffoni, AlessioAlessioGriffoniSrivastava, PuneetPuneetSrivastavaLinten, DimitriDimitriLintenThijs, StevenStevenThijsScholz, MirkoMirkoScholzMarcon, DenisDenisMarconVashchenko, VladislavVladislavVashchenkoGallerano, AntonioAntonioGalleranoLafonteese, DavidDavidLafonteeseHopper, PeterPeterHopperVan Hove, MarleenMarleenVan HoveDecoutere, StefaanStefaanDecoutereGroeseneken, GuidoGuidoGroeseneken2021-10-192021-10-192011https://imec-publications.be/handle/20.500.12860/18662HBM ESD robustness of GaN-on-Si Schottky diodes for power applicationsProceedings paper