ESD diodes in Bulk Si gate-all-around vertically stacked horizontal nanowire technology

Chen, Shih-HungShih-HungChenHellings, GeertGeertHellingsScholz, MirkoMirkoScholzLinten, DimitriDimitriLintenMertens, HansHansMertensRitzenthaler, RomainRomainRitzenthalerBoschke, RomanRomanBoschkeGroeseneken, GuidoGuidoGroesenekenHoriguchi, NaotoNaotoHoriguchi2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/26433ESD diodes in Bulk Si gate-all-around vertically stacked horizontal nanowire technologyProceedings paper