A 247 and 272 GHz Two-Stage Regenerative Amplifiers in 65 nm CMOS with 18 and 15 dB Gain Based on Double-G(max) Gain Boosting Technique

Park, Dae-WoongDae-WoongParkUtomo, Dzuhri RadityoDzuhri RadityoUtomoHong, Jong-PhilJong-PhilHongVaesen, KristofKristofVaesenWambacq, PietPietWambacqLee, Sang-GugSang-GugLee2022-01-032021-11-022022-01-032020naWOS:000621657500066https://imec-publications.be/handle/20.500.12860/38133A 247 and 272 GHz Two-Stage Regenerative Amplifiers in 65 nm CMOS with 18 and 15 dB Gain Based on Double-G(max) Gain Boosting TechniqueProceedings paper978-1-7281-9942-9WOS:00062165750006665-NM CMOS