Two-pulse C-V: a new method for characterization electron traps in the bulk of SiO2/high-k dielectric stacks

Zhang, W.D.W.D.ZhangGovoreanu, BogdanBogdanGovoreanuZheng, X.F.X.F.ZhengRuiz Aguado, DanielDanielRuiz AguadoRosmeulen, MaartenMaartenRosmeulenBlomme, PieterPieterBlommeZhang, J.F.J.F.ZhangVan Houdt, JanJanVan Houdt2021-10-172021-10-1720080741-3106https://imec-publications.be/handle/20.500.12860/14834Two-pulse C-V: a new method for characterization electron traps in the bulk of SiO2/high-k dielectric stacksJournal article