Ge oxide scavenging and gate stack nitridation for strained Si0.7Ge0.3 pFinFETs enabling 35% higher mobility than Si

Arimura, HiroakiHiroakiArimuraWostyn, KurtKurtWostynRagnarsson, Lars-AkeLars-AkeRagnarssonCapogreco, ElenaElenaCapogrecoVaisman Chasin, AdrianAdrianVaisman ChasinConard, ThierryThierryConardBrus, StephanStephanBrusFavia, PaolaPaolaFaviaFranco, JacopoJacopoFrancoMitard, JeromeJeromeMitardDemuynck, StevenStevenDemuynckHoriguchi, NaotoNaotoHoriguchi2021-10-272021-10-272019https://imec-publications.be/handle/20.500.12860/32454Ge oxide scavenging and gate stack nitridation for strained Si0.7Ge0.3 pFinFETs enabling 35% higher mobility than SiProceedings paper