Influence of the drain bias and gate length ofpartially depleted SOI MOSFETs on the ZTC niasing point

Camillo, L.M.L.M.CamilloMartino, J.A.J.A.MartinoSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/13471Influence of the drain bias and gate length ofpartially depleted SOI MOSFETs on the ZTC niasing pointProceedings paper