Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO2/GeSi1-x/SiO2/(100)Si structures with nm-thin GexSi1-x layers

Madia, O.O.MadiaNguyen, A.P.D.A.P.D.NguyenThoan, N.H.N.H.ThoanAfanasiev, ValeriValeriAfanasievStesmans, AndreAndreStesmansSouriau, LaurentLaurentSouriauSlotte, J.J.SlotteTuomisto, F.F.Tuomisto2021-10-222021-10-2220140169-4332https://imec-publications.be/handle/20.500.12860/24174Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO2/GeSi1-x/SiO2/(100)Si structures with nm-thin GexSi1-x layersJournal articlehttp://www.sciencedirect.com/science/article/pii/S0169433213016668