Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channels

Delabie, AnneliesAnneliesDelabieAlian, AliRezaAliRezaAlianBellenger, FlorenceFlorenceBellengerBrammertz, GuyGuyBrammertzBrunco, DavidDavidBruncoCaymax, MattyMattyCaymaxConard, ThierryThierryConardFranquet, AlexisAlexisFranquetHoussa, MichelMichelHoussaSioncke, SonjaSonjaSionckeVan Elshocht, SvenSvenVan Elshochtvan Hemmen, J.L.J.L.van HemmenKeuning, W.W.KeuningKessels, W.M.M.W.M.M.KesselsAfanas'ev, V.V.V.V.Afanas'evStesmans, AndreAndreStesmansHeyns, MarcMarcHeynsMeuris, MarcMarcMeuris2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/13648Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channelsProceedings paper