Cumulated charging mechanisms at gate processing in high-kappa first planar NMOS devices

Hiblot, GaspardGaspardHiblotParihar, NarendraNarendraPariharDupuy, EmmanuelEmmanuelDupuyMannaert, GeertGeertMannaertBaudot, SylvainSylvainBaudotKaczer, BenBenKaczerDe Heyn, VincentVincentDe HeynMercha, AbdelkarimAbdelkarimMercha2022-01-072021-11-022022-01-0720201930-8841WOS:000659349800011https://imec-publications.be/handle/20.500.12860/37865Cumulated charging mechanisms at gate processing in high-kappa first planar NMOS devicesProceedings paper10.1109/IIRW49815.2020.9312853978-1-7281-7058-9WOS:000659349800011PLASMA-INDUCED DAMAGEOXIDE DAMAGE