Effects on the HE implantation energy on the strain relaxation of epitaxial Si0.8Ge0.2/Si(100) heterostructures

Morschbacher, MarioMarioMorschbacherda Silva, DouglasDouglasda SilvaFichtner, PauloPauloFichtnerZawislak, FernandoFernandoZawislakHollaender, BerndBerndHollaenderLuysberg, MartinaMartinaLuysbergMantl, SiegfriedSiegfriedMantlCaymax, MattyMattyCaymaxLoo, RogerRogerLoo2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9324Effects on the HE implantation energy on the strain relaxation of epitaxial Si0.8Ge0.2/Si(100) heterostructuresOral presentation