Interplay between relaxation and defect formation, and atomic Sn distribution in Ge(1-x)Sn(x) unraveled with atom probe tomography

Kumar, ArulArulKumarDemeulemeester, JelleJelleDemeulemeesterBogdanowicz, JanuszJanuszBogdanowiczMelkonyan, DavitDavitMelkonyanWang, WeiWeiWangLoo, RogerRogerLooVandervorst, WilfriedWilfriedVandervorstFleischmann, ClaudiaClaudiaFleischmannGencarelli, FedericaFedericaGencarelliShimura, YosukeYosukeShimura2021-10-222021-10-2220150021-8979https://imec-publications.be/handle/20.500.12860/25499Interplay between relaxation and defect formation, and atomic Sn distribution in Ge(1-x)Sn(x) unraveled with atom probe tomographyJournal articlehttp://scitation.aip.org/content/aip/journal/jap/118/2/10.1063/1.4926473